Talk:Power MOSFET

Error?

The caption on the first picture claims that the two small surface-mount MOSFETS are each capable of switching 120 Amperes at 30 Volts. Could this have been a mistake? It seems more likely that the ratings would be the other way around, i.e. 30 Amperes at 120 Volts. Ilikefood (talk) 15:30, 23 September 2008 (UTC)

Yes that does look like an error. I'm going to switch the values. Nazli (talk) 16:48, 23 September 2008 (UTC)picture

120A 30V is a reasonable rating for a MOSFET in a D2PAK, eg from a very quick look the ST STB200NF04: 40V 120A 3.3 milliohm. However the comment on the picture's page does say 30V 120A. Adx (talk) 02:06, 8 October 2009 (UTC)

As I can see, ratings have been switched which seems incorrect, since 120V is a very rare voltage rating for a power MOSFET, while 30V is quite popular. Also, 120V and only 30A is a relatively low rating for a modern MOSFET, especially in so large a package. — Preceding unsigned comment added by 89.68.164.90 (talk) 23:27, 12 November 2012 (UTC)

Please fix the first few pictures .. fig 1 and others don't appear well in Explorer .. thanks 24.6.8.100 (talk) 00:16, 12 January 2009 (UTC)bnichols

Suggest merge

Over at 2N7000 there's a list of power MOSFET devices being discussed; seems logical to bring that here to give it context. --Wtshymanski (talk) 17:42, 17 April 2011 (UTC)

I thought "low-power MOSFET" was sort of the opposite of "power MOSFET". No? Dicklyon (talk) 18:53, 17 April 2011 (UTC)

In my line of work, if I can lift it unassisted, it's low power. I thought the opposite of "power" was "small signal". Please, clarify the criteria for me. --Wtshymanski (talk) 19:06, 17 April 2011 (UTC)

That's why I said "sort of". Dicklyon (talk) 19:08, 17 April 2011 (UTC)

So what's the dividing line? Andy Dingley says 200 mA is small signal. Is this written down somewhere or am I going to have to run every device past the Cabal for approval? --Wtshymanski (talk) 19:54, 17 April 2011 (UTC)

I did a search and did find a couple of parts in TO-92 packages called "power mosfet" by their manufacturers; probably because they were designed for power, and also available in the heat-sinked Ipak package. But I don't find the 2N7000 called a power mosfet anywhere. Do you? Dicklyon (talk) 20:25, 17 April 2011 (UTC)

This supplier calls it a "Voltage controlled small signal switch", and that its applications include "power MOSFET gate drivers"; so mention it here if you like, but don't merge it here. Dicklyon (talk) 20:30, 17 April 2011 (UTC)

Chinese data sheets are a little less authoritative than "for dummies" books, but this is the best we can do on a Sunday afternoon. --Wtshymanski (talk) 20:33, 17 April 2011 (UTC)

Sorry, I forgot how xenophobic you are. You can find the same line at a zillion other sites, including Fairchild's, which I think is where they copied all that stuff from. Dicklyon (talk) 21:28, 17 April 2011 (UTC)

W, are you serious about keeping this stupid merge request open? Why not just admit that it was just another misguided and failed attempt to get rid of the 2N7000 article, and take your tags away? Dicklyon (talk) 21:32, 17 April 2011 (UTC)

Yes, I'm serious. The present state of the 2N7000 article is a grab bag of parts with no explanation of why this is supposed to be significant. At least merging it with MOSFET would give it some context for the unwary reader who hasn't been teethed on solder. Chinese data sheets are often badly translated into English, is my actual concern. But of course we don't need to assume good faith any more, because we don't agree with my edits now, do we? --Wtshymanski (talk) 21:41, 17 April 2011 (UTC)

No, we don't. And we don't. Dicklyon (talk) 21:47, 17 April 2011 (UTC)

Seeing no reason to suspect that anyone will support this, I'm removing the tag again. Dicklyon (talk) 22:05, 17 April 2011 (UTC)

Suggest replace

I will replace them IRLZ24N with FDL100N50F which has the highest dissipated power 2500W from the market for TO262 case. This is representative example of power MOSFET. In second place after power is more MOSFETs with 1890W power dissipation.

MOSFET with 2500W Power Dissipation

— Preceding unsigned comment added by Radud55 (talk • contribs) 14:27, 15 April 2021 (UTC)

§ — Preceding unsigned comment added by Radud55 (talk • contribs) 14:06, 15 April 2021 (UTC)

Advanced Power Technology and Ted Hollinger

I have a professional relationship with Ted Hollinger, so I am requesting that an independent editor review this proposed addition rather than editing the article directly. Please insert the following text in the History section immediately after the paragraph ending “The HexFET was commercialized by International Rectifier in 1978.”

In June 1984, Ted Hollinger founded Advanced Power Technology, Inc. (APT) in Bend, Oregon, to develop power semiconductor devices for advanced electrical switching applications. A 1988 Dataquest industry profile described APT as a designer, manufacturer, and marketer of low-cost, high-power MOSFETs used in data-processing, telecommunications, industrial, military, and other power-switching equipment. At the time of the Dataquest report, APT employed 69 people and manufactured its semiconductor devices at its Bend facility using a 5-micrometre metal-gate MOS process and four-inch silicon wafers.

Hollinger served as APT’s vice president of advanced applications and systems, providing technical and applications leadership as the company developed and commercialized high-power MOSFET technology. The company’s board included semiconductor industry executive Morris Chang, then president of Taiwan’s Industrial Technology Research Institute and the founding chairman of Taiwan Semiconductor Manufacturing Company. Chang’s participation connected the emerging American power-semiconductor company with one of the most influential figures in the development of the modern semiconductor foundry industry.

APT’s historical contribution was not the original invention of the power MOSFET, which preceded the company. Its role was in advancing the manufacture, performance, application, and commercialization of high-power MOSFETs during the industry’s expansion in the 1980s. APT subsequently developed a broader portfolio of high-voltage and high-performance power semiconductors, including MOSFETs, insulated-gate bipolar transistors, diodes, radio-frequency devices, and integrated power modules. Microsemi acquired APT in 2005. Eltrainu (talk) 18:41, 19 August 2026 (UTC)

 Not done: The {{request edit}} template is for requesting changes to semi-protected pages. For conflict of interest requests, please use {{Edit COI}} instead. In solidarity, Randomdude123459 | Talk | Contribs | 23:09, 19 August 2026 (UTC)

References