Talk:ISFET
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Addition of the WikiProject Electronics banner and chemistry banner when opening this talk page. Shinkolobwe (talk) 16:07, 31 October 2010 (UTC)
External links modified
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Light-sensitive drift
[edit]I made research on ISFETs with Si3N4 gates back in the 1980s. The main problem was not the reference electrode, but light sensitivity. Light had three effects: (1) a direct effect on the potential, (2) even very small amounts of light exitated electrons in the gate material which caused irreversible drift, (3) light increased pH hysteresis. The exitation of electrons was highest at high pH. In general, the stability depended on pH, but less on redox potential of the solution. Another big problem was encapsulation. It was very difficult to protect the sensitive semiconductor from agressive solutions. The conclusion was that it is more efficient to place an amplifier close to a conventional ion-sensitive electrode than to integrate the electronics into the electrode. Unfortunately, this is only published in Danish in my PhD dissertation (Fog, A. Solid state pH-sensorer : Erhvervsforskerprojekt 63. Lyngby DTH erhvervsforskerrapport, 1982). 08:42, 27 July 2026 (UTC) Agnerf (talk) 08:42, 27 July 2026 (UTC)