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Semiconductor characterization techniques

From Wikipedia, the free encyclopedia

Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.). Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.

Electrical characterization techniques

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Electrical characterization can be used to determine resistivity, carrier concentration, mobility, contact resistance, barrier height, depletion width, oxide charge, interface states, carrier lifetimes, and deep level impurities.

Optical characterization techniques

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Physical and chemical characterization techniques

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Future characterization methods

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Many of these techniques have been perfected for silicon, making it the most studied semiconductor material. This is a result of silicon's affordability and prominent use in computing. As other fields such as power electronics, LED devices, and photovoltaics develop, characterization of a variety of alternative materials (including organic semiconductors) will continue to increase in importance. Many existing characterization methods will need to be adapted to accommodate the peculiarities of these new materials.

References

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  • Schroder, Dieter K. Semiconductor Material and Device Characterization. 3rd Ed. John Wiley and Sons, Inc. Hoboken, New Jersey, 2006.
  • McGuire, Gary E. Characterization of Semiconductor Materials: Principles and Methods. Vol 1. Noyes Publications, Park Ridge, New Jersey, 1989.