Edge Rewrite
// HTMLRewriter · presentation

This page was redesigned at the edge.

Cloudflare fetched the original article and streamed it through HTMLRewriter to apply an entirely new visual system without rebuilding the source page.

// request.cf · coarse context

A page that knows where it met you.

Only coarse request metadata is shown. This demo does not display or persist visitor IP addresses.

Country
US
Cloudflare location
CMH
Connection
HTTP/2
Language
Not provided

Ray ID: a22522033861b071

Jump to content

Programmable unijunction transistor

From Wikipedia, the free encyclopedia
Programmable unijunction transistor
Component typePassive
InventorGeneral Electric[1]
Pin namesanode, gate and cathode
Electronic symbol
Graph of PUT characteristic curve, similar to UJT

A programmable unijunction transistor (PUT) is a three-lead electronic semiconductor device which is similar in its characteristics to a unijunction transistor (UJT), except that its behavior can be controlled using external components. In a UJT, the base region is divided into two parts by the emitter. The two parts of the base form a voltage divider, which sets the operating point of the UJT. That voltage divider can be programmed with two physical resistors connected to the gate terminal of the PUT. This allows the designer some control over the operating point of the PUT.[2]

Construction

[edit]

In construction, the programmable transistor is similar to the silicon controlled rectifier (SCR). Like SCR, it consists of four layers ‒ PNPN ‒ but its gate is connected to the second layer (N-type), not the third one (P-type) as with SCR.[1]

Applications

[edit]

As of 2012 ON Semiconductor manufactured a part: 2N6027. 2N6028 was also made in the past.[1]

References

[edit]
  1. 1 2 3 Jim Keith. "Programmable Unijunction Transistor Flasher". Archived from the original on 2018-03-05.
  2. "PUT - Programmable Unijunction Transistor - Working, Construction, Biasing - D&E notes". www.daenotes.com. 15 December 2017. Archived from the original on 2018-01-05.