Edge Rewrite
everything Source code View original
// HTMLRewriter · presentation

This page was redesigned at the edge.

Cloudflare fetched the original article and streamed it through HTMLRewriter to apply an entirely new visual system without rebuilding the source page.

// request.cf · coarse context

A page that knows where it met you.

Only coarse request metadata is shown. This demo does not display or persist visitor IP addresses.

Country
US
Cloudflare location
CMH
Connection
HTTP/2
Language
Not provided

Ray ID: a44da8d6fb056069

Jump to content

Draft:Jerzy Kanicki

From Wikipedia, the free encyclopedia


  • Comment: Comment: In accordance with the Wikimedia Foundation's Terms of Use, I disclose that I have been paid by my employer, Authority Group, for my contributions to this article. AndrewGrayWAG (talk)
Jerzy Kanicki
EducationUniversité libre de Bruxelles
Known forThin-film transistors; active-matrix display electronics; active-pixel-sensor X-ray imagers
Scientific career
FieldsElectrical engineering
Materials science
WorkplacesIBM Thomas J. Watson Research Center
University of Michigan

Jerzy Kanicki is an electrical engineer and materials scientist. He is a professor of electrical engineering and computer science at the University of Michigan. His research concerns thin-film semiconductor devices, thin-film transistors, active-matrix display electronics, amorphous oxide semiconductors and electronic imaging.[1][2] Before joining Michigan in 1994 he was a research staff member at the IBM Thomas J. Watson Research Center.[3][2]

Education

[edit]

Kanicki studied at the Université libre de Bruxelles in Belgium, receiving a Bachelor of Science in chemical sciences in 1976, a Master of Science in 1978, and a Doctor of Science in 1982.[4] The doctorate was conferred with the highest distinction (la plus grande distinction) in January 1982.[4][5] His doctoral thesis concerned the optical, electrical and photo-electronic properties of trans-polyacetylene.[4]

In 1982 the Académie royale des Sciences, des Lettres et des Beaux-Arts de Belgique listed Kanicki among the recipients of the Prix Jean-Servais Stas.[5]

Career

[edit]

Kanicki joined the IBM Thomas J. Watson Research Center in Yorktown Heights, New York, as a research staff member in 1983, working on hydrogenated amorphous silicon thin-film devices for flat-panel displays.[4][3]

At the research centre he worked on hydrogenated amorphous-silicon thin-film transistors for active-matrix liquid-crystal displays, as part of the company's research programme on thin-film-transistor liquid-crystal displays.[4][6][7] IBM pursued the technology in partnership with Toshiba.[7][8] In 1994 he joined the faculty of the University of Michigan.[2][3] He held a concurrent appointment in macromolecular science and engineering from 2000 to 2011,[4] and took sabbatical years at the University of California, Santa Barbara, the University of California, San Diego, and the Massachusetts Institute of Technology in 2002, 2009 and 2017 respectively.[2]

Research

[edit]

Kanicki's work has addressed the electrical stability and reliability of amorphous-silicon thin-film transistors. A 1993 paper in Applied Physics Letters written with Frank R. Libsch reported a stretched-exponential time dependence for bias-stress-induced charge trapping and threshold-voltage shift in amorphous thin-film transistors.[6]

With Yi He and Reiji Hattori he published on current-source pixel circuits based on amorphous-silicon thin-film transistors for active-matrix organic light-emitting displays.[9] His later work on amorphous indium-gallium-zinc-oxide thin-film transistors included studies with Hideo Hosono, Hideya Kumomi and other collaborators on their electrical properties and stability.[10][11] A 2016 paper with Mitsuru Nakata and Chumin Zhao examined DC-sputtered amorphous In–Sn–Zn–O thin-film transistors; it was featured by Solid-State Electronics in its 2016 collection.[12][13]

Kanicki's group has also worked on active-pixel-sensor X-ray imagers for medical imaging, in particular digital breast tomosynthesis.[2] This work included amorphous indium-gallium-zinc-oxide thin-film-transistor and large-area CMOS active-pixel-sensor detectors,[14][15] and task-based modelling of an ultra-high-resolution imaging system for breast tomosynthesis.[16]

Professional service

[edit]

Kanicki served as an editor of IEEE Transactions on Electron Devices for molecular and organic devices from 2005 to 2011.[17][18] He edited two volumes on amorphous and microcrystalline semiconductor devices for Artech House in 1991 and 1992,[19][20] and co-wrote a book on medical imaging displays for SPIE Press in 2004.[21] Within the Society for Information Display he has served as a director of the Metropolitan Detroit chapter.[22] He received a presidential citation from the society in 2013[23] for organising its first Innovation Zone, at the 2012 SID International Symposium.[4][24]

References

[edit]
  1. ↑ "Jerzy Kanicki". University of Michigan, Electrical Engineering and Computer Science. Retrieved 30 September 2026.
  2. 1 2 3 4 5 "Jerzy Kanicki". University of Michigan, Applied Physics Program. Retrieved 30 September 2026.
  3. 1 2 3 "People". Organic and Molecular Electronics Laboratory, University of Michigan. Retrieved 30 September 2026.
  4. 1 2 3 4 5 6 7 "Curriculum vitae: Jerzy Kanicki" (PDF). University of Michigan. 2016. Retrieved 30 September 2026.
  5. 1 2 "Proclamation". Bulletins de l'Académie Royale de Belgique, Classe des sciences (in French). 68: 1011–1019. 1982. Retrieved 30 September 2026.
  6. 1 2 Libsch, F. R.; Kanicki, J. (1993). "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors". Applied Physics Letters. 62 (11): 1286–1288. doi:10.1063/1.108709.
  7. 1 2 Howard, W. E. (1992). "Thin-film-transistor/liquid crystal display technology—An introduction". IBM Journal of Research and Development. 36 (1): 3–10. doi:10.1147/rd.361.0003.
  8. ↑ "Toshiba and IBM to scrap LCD venture". EE Times. 16 May 2001. Retrieved 30 September 2026.
  9. ↑ He, Y.; Hattori, R.; Kanicki, J. (2000). "Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays". IEEE Electron Device Letters. 21 (12): 590–592. doi:10.1109/55.887475.
  10. ↑ Abe, K.; Takahashi, K.; Sato, A.; Kumomi, H.; Nomura, K.; Kamiya, T.; Kanicki, J.; Hosono, H. (2012). "Amorphous In–Ga–Zn–O dual-gate TFTs: current–voltage characteristics and electrical stress instabilities". IEEE Transactions on Electron Devices. 59 (7): 1928–1935. doi:10.1109/TED.2012.2195008.
  11. ↑ Fung, T.-C.; Chuang, C.-S.; Nomura, K.; Shieh, H.-P. D.; Hosono, H.; Kanicki, J. (2008). "Photofield-effect in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors". Journal of Information Display. 9 (4): 21–29. doi:10.1080/15980316.2008.9652066.
  12. ↑ Nakata, M.; Zhao, C.; Kanicki, J. (2016). "DC sputtered amorphous In–Sn–Zn–O thin-film transistors: electrical properties and stability". Solid-State Electronics. 116: 22–29. doi:10.1016/j.sse.2015.11.025.
  13. ↑ "DC sputtered amorphous In–Sn–Zn–O thin-film transistors: electrical properties and stability". Solid-State Electronics news. Elsevier. 22 August 2016. Retrieved 30 September 2026.
  14. ↑ Zhao, C.; Kanicki, J. (2014). "Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis". Medical Physics. 41 (9): 091902. doi:10.1118/1.4892382. PMID 25186389.
  15. ↑ Zhao, C.; Kanicki, J.; Konstantinidis, A. C.; Patel, T. (2015). "Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: analysis, modeling, and characterization". Medical Physics. 42 (11): 6294–6308. doi:10.1118/1.4932368. PMID 26520722.
  16. ↑ Zhao, C.; Kanicki, J. (2017). "Task-based modeling of a 5k ultra-high-resolution medical imaging system for digital breast tomosynthesis". IEEE Transactions on Medical Imaging. 36 (9): 1820–1831. doi:10.1109/TMI.2017.2695982. PMID 28436856.
  17. ↑ "IEEE Transactions on Electron Devices publication information". IEEE Transactions on Electron Devices. February 2005. doi:10.1109/TED.2005.843667.
  18. ↑ "IEEE Transactions on Electron Devices publication information". IEEE Transactions on Electron Devices. June 2011. doi:10.1109/TED.2011.2155291.
  19. ↑ Kanicki, Jerzy, ed. (1991). Amorphous & Microcrystalline Semiconductor Devices: Optoelectronic Devices. Artech House. ISBN 978-0-89006-490-0.
  20. ↑ Kanicki, Jerzy, ed. (1992). Amorphous & Microcrystalline Semiconductor Devices, Volume II: Materials and Device Physics. Artech House. ISBN 978-0-89006-379-8.
  21. ↑ Badano, Aldo; Flynn, Michael J.; Kanicki, Jerzy (2004). High-Fidelity Medical Imaging Displays. SPIE Press. doi:10.1117/3.2265081. ISBN 978-0-8194-5191-0.
  22. ↑ "Metro Detroit Chapter". Society for Information Display. Retrieved 30 September 2026.
  23. ↑ "Presidential Citations". Society for Information Display. Retrieved 30 September 2026.
  24. ↑ "I-Zone". Society for Information Display. Retrieved 30 September 2026.
Retrieved from "https://en.wikipedia.org/w/index.php?title=Draft:Jerzy_Kanicki&oldid=1377738682"